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| Ordering number : ENN6572 2SB817P / 2SD1047P: PNP Epitaxial Planar Silicon Transistor 2SB817P 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features * Package Dimensions unit : mm 2022A [2SB817P / 2SD1047P] 15.6 14.0 2.6 * * 1.6 2.0 20.0 1.3 1.2 15.0 20.0 3.5 Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF characteristic. 3.2 4.8 2.0 0.6 1.0 1 0.6 2 3 1.4 Specifications ( ) : 2SB817P Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB 5.45 Ratings (-)160 (-)140 (-)6 (-)12 (-)15 120 150 -40 to +150 Unit V V V A A W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (--)0.1 (--)0.1 Unit mA mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82200 TS IM TA-3036 No.6572-1/4 2SB817P / 2SD1047P Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Saturation Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time Symbol hFE1 hFE2 fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tf tstg Conditions VCE=(--)5V, IC=(-)1A VCE=(--)5V, IC=(-)6A VCE=(--)5V, IC=(-)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(-)1A IC=(--)5A, IB=(--)0.5A IC=(--)5mA, IE=0 IC=(--)5mA, RBE= IC=(--)50mA, RBE= IE=(-)5mA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. (1.1)0.6 (--)160 (--)140 (--)140 (--)6 (0.25)0.26 (0.53)0.68 (1.61)6.88 Ratings min 60* 20 15 (300)210 1.5 2.5 MHz pF V V V V V V s s s typ max 200* Unit * : The 2SB817P / 2SD1047P are classified by 1A hFE as follows Rank hFE D 60 to 120 E 100 to 200 Swicthing Time Test Circuit IB1 PW=20s INPUT 200VR 51 VCC=20V 1F VBE= --2V 1F 20 IB2 1 OUTPUT 10IB1= --10IB2=IC=1A For PNP, the polarity is reversed. --10 --9 IC -- VCE 2SB817P 10 IC -- VCE 24 0m Collector Current, IC -- A --7 --6 --5 --4 --3 Collector Current, IC -- A --8 --2 4 --20 A --160m A 0mA 8 7 6 5 4 3 2 1 0m 9 200mA 160mA A 2SD1047P 120m A 80mA --120mA --80mA 40mA 20mA --40mA --20mA --2 --1 0 0 --5 --10 --15 --20 --25 --30 IB=0 --35 --40 0 0 5 10 15 20 25 30 IB=0 35 40 Collector-to-Emitter Voltage, VCE -- V --7 IT02167 7 IC -- VBE Collector-to-Emitter Voltage, VCE -- V IT02168 IC -- VBE --6 2SB817P VCE= --5V Collector Current, IC -- A 6 2SD1047P VCE=5V Collector Current, IC -- A --5 5 --4 4 --3 3 --2 2 --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Base-to-Emitter Voltage, VBE -- V IT02169 Base-to-Emitter Voltage, VBE -- V IT02170 No.6572-2/4 2SB817P / 2SD1047P 5 f T -- IC Gain-Bandwidth Product, f T -- MHz 2SB817P VCE= --5V 5 3 2 f T -- IC 2SD1047P VCE=5V Gain-Bandwidth Product, f T -- MHz 3 2 10 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 1000 7 5 --10 IT02171 7 1.0 0.1 2 3 5 7 1.0 2 3 5 hFE -- IC Collector Current, IC -- A 1000 7 10 IT02172 hFE -- IC 2SB817P VCE= --5V DC Current Gain, hFE 7 5 3 2 2SD1047P VCE=5V DC Current Gain, hFE 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 2 7 --10 2 IT02173 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT02174 Cob -- VCB Collector Current, IC -- A 2 Cob -- VCB 2SB817P f=1MHz Output Capacitance, Cob -- pF 7 5 3 2 2SD1047P f=1MHz Output Capacitance, Cob -- pF 1000 7 5 3 2 1000 100 7 5 3 2 --1.0 2 3 5 7 --10 2 3 5 --100 IT02175 7 100 7 5 3 2 1.0 2 3 5 7 10 2 3 5 7 100 IT02176 Collector-to-Base Voltage, VCB -- V 3 2 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 3 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --10 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SB817P IC / IB=10 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.1 2SD1047P IC / IB=10 --1.0 7 5 3 2 --0.1 7 5 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 7 --10 IT02177 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 7 10 IT02178 No.6572-3/4 2SB817P / 2SD1047P Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V VBE(sat) -- IC 2SB817P IC / IB=10 5 3 2 VBE(sat) -- IC 2SD1047P IC / IB=10 --10 7 5 3 2 10 7 5 3 2 --1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 --10 IT02179 7 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 IT02180 Collector Current, IC -- A 2 10 ASO Collector Current, IC -- A 140 PC -- Tc 2SB817P / 2SD1047P 7 5 3 2 1.0 7 5 3 2 0.1 5 Collector Current, IC -- A rat 1 ion 00m s ms s Collector Dissipation, PC -- W IC ICP DC ope 10 1m 120 100 80 60 40 2SB817P / 2SD1047P (For PNP minus sign is omitted) 7 10 2 3 5 7 100 2 IT02181 20 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V Case Tamperature, Tc -- C IT02182 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6572-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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